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| FMM5046VF GaAs MMIC FEATURES * * * * High Output Power: 36dBm (typ.) High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the 1.7 to 2.3GHz band. The output stage is partially matched for this device. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Rating 12 -7 10 -55 to +125 -40 to +70 Unit V V dBm C C Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 10 volts. 2. The gate operating voltage (VGG) should not exceed -5 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Input VSWR DC Input Current DC Input Current CASE STYLE: VF Symbol f P1dB GL VSWRi IDD IGG VDD = 10V VGG = -5V f = 2.2GHz 35.0 29.0 Test Conditions Min. Limit Typ. Max. 2.2 36.0 30.0 1.5:1 1.1 35 Unit GHz dBm dB A mA G.C.P.: Gain Compression Point Edition 1.5 November 2001 1 FMM5046VF GaAs MMIC IMD vs. OUTPUT POWER VDS=10V, VGG=-5V, f1=2.14GHz, f=10MHz, ACPR vs. OUTPUT POWER -20 -25 -30 IMD (dBc) -25 -30 -35 ACPR (dBc) VDS=10V, VGG=-5V, f1=2.14GHz, W-CDMA, Single Signal -35 -40 -45 -50 -55 -60 18 20 22 24 26 28 30 32 34 -40 5MHz -45 -50 -55 -60 10MHz -65 -70 18 20 22 24 26 28 30 32 34 Output Power (dBm) Total Output Power (dBm) OUTPUT POWER vs. FREQUENCY VDS=10V, VGG=-5V 10dBm 6dBm 2dBm OUTPUT POWER & IDSRF vs. INPUT POWER VDD=10V, VGG=-5V, f=2.2GHz 40 38 38 36 Output Power (dBm) 34 32 30 28 26 24 -6dBm 36 Output Power (dBm) 34 32 30 28 26 24 22 20 1.9 2.0 2.1 2.2 -10dBm -2dBm 2.0 1.8 1.6 1.4 1.2 -10 -8 -6 -4 -2 0 2 4 6 8 10 IDS(RF) (A) 22 20 2.3 Input Power (dBm) Frequency (GHz) 2 FMM5046VF GaAs MMIC S11 S22 +j100 2.0 1.9 1.8 2.1 2.2 2.5 +j50 +j25 +90 S21 S12 +j10 0 2.3 1.9 2.0 1.7 1.8 2.5 2.6 2.1 1.7 2.7GHz 2.7GHz 2.2 10 25 2.6 2.3 2.5 2.4 +j250 2.6 2.4 2.7GHz 2.4 2.7GHz 2.0 2.3 1.7 8 16 1.7 100 180 2.3 24 32 SCALE FOR |S21| 1.8 SCALE FOR |S12| 0 -j10 -j250 2.2 0.01 1.9 -j25 -j50 -j100 2.1 2.0 0.02 -90 S-PARAMETERS VDD = 10V, VGG = -5V FREQUENCY S11 (MHZ) MAG ANG 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 .391 .406 .390 .333 .224 .076 .079 .212 .326 .433 .532 .617 .693 153.3 136.9 119.5 100.1 77.6 49.7 -130.6 -151.5 -165.3 -177.1 171.4 160.0 149.0 S21 MAG 33.278 34.121 36.079 38.154 38.680 36.229 31.303 25.761 21.220 17.159 14.146 11.311 9.165 ANG 26.0 -4.1 -36.5 -70.3 -107.1 -145.1 178.7 145.9 116.8 88.5 62.3 36.1 11.7 S12 MAG ANG .003 .003 .003 .003 .003 .003 .003 .004 .004 .005 .005 .005 .005 100.8 98.4 94.1 91.1 94.1 102.5 110.4 114.8 112.8 105.8 100.0 97.0 91.2 S22 MAG ANG .684 .702 .714 .702 .642 .537 .431 .357 .317 .283 .248 .207 .185 144.4 140.4 134.0 125.1 114.9 107.0 104.6 107.3 111.2 114.6 118.4 127.0 143.7 3 FMM5046VF GaAs MMIC Case Style "VF" 17.780.15 13.460.15 0.50.3 8.38 6.4 0.50.3 4-C 1.52 1.0 MIN INDEX PIN ASSIGNMENT 1 2 3 Pin 1. 2. 3. 4. 5. 6. 0.1250.15 1.020.15 3.0 MAX 0.510.15 8.330.25 2.44 6.63 6.63 Symbol VDD RF in VGG NC RF out VDD 2-R 1.22 6 5 4 4-0.5 2-0.3 (4-R 0.5) 7.88 0.30.15 0.50.15 0.50.15 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 1.0 MIN Unit: mm(inches) CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 4 |
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